DocumentCode
2412093
Title
Narrow linewidth, high speed, AlInGaAs, strained MQW, 1.55 /spl mu/m, DFB laser diodes
Author
Sahara, R. ; Ranganathan, R. ; Dormail, J. ; Patterson, R. ; Coyne, J. ; Burroughs, S. ; Lu, H.
Author_Institution
Lasertron, Bedford, MA, USA
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
75
Lastpage
76
Abstract
Extremely narrow linewidth (⩽100 kHz), DFB laser diodes using an optimized strain-compensated eight quantum well AlInGaAs active region with 20 GHz f/sub -3dB/ are presented.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; spectral line breadth; 1.55 mum; AlInGaAs; AlInGaAs strained MQW 1.55 /spl mu/m DFB laser diodes; high speed; narrow linewidth; optimized strain-compensated eight quantum well AlInGaAs active region; Diode lasers; Lasers and Electro-Optics Society; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734144
Filename
734144
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