Title :
Narrow linewidth, high speed, AlInGaAs, strained MQW, 1.55 /spl mu/m, DFB laser diodes
Author :
Sahara, R. ; Ranganathan, R. ; Dormail, J. ; Patterson, R. ; Coyne, J. ; Burroughs, S. ; Lu, H.
Author_Institution :
Lasertron, Bedford, MA, USA
Abstract :
Extremely narrow linewidth (⩽100 kHz), DFB laser diodes using an optimized strain-compensated eight quantum well AlInGaAs active region with 20 GHz f/sub -3dB/ are presented.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; spectral line breadth; 1.55 mum; AlInGaAs; AlInGaAs strained MQW 1.55 /spl mu/m DFB laser diodes; high speed; narrow linewidth; optimized strain-compensated eight quantum well AlInGaAs active region; Diode lasers; Lasers and Electro-Optics Society; Quantum well devices;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734144
