Title :
High T/sub 0/ 1.3 /spl mu/m AlGaInAs/InP distributed feedback laser with complex-coupled grating growth by LP-MOCVD
Author :
Bo Chen ; Wei Wang ; Xiao-Jie Wang ; Jin-Yuan Zhang ; Hong-Liang Zhu ; Zhou Fan
Author_Institution :
Nat. Res. Centre for Optoelectron. Technol., Acad. Sinica, Beijing, China
Abstract :
A high T/sub 0/ 1.3 /spl mu/m AlGaInAs-InP MQW DFB laser, which was grown by LP-MOCVD, is demonstrated for the first time. The T/sub 0/ is up to 98K and the drop of 0.5dB in slope efficiency is achieved within 20 C to 80 C. A DFB laser with current blocking grating was realized successfully.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor growth; 1.3 mum; 20 to 80 C; 98 K; AlGaInAs-InP; AlGaInAs/InP distributed feedback laser; DFB laser; LP-MOCVD; complex-coupled grating growth; current blocking grating; high T/sub 0/; slope efficiency; Distributed feedback devices; Electrons; Fiber lasers; Gratings; Indium phosphide; Laser feedback; Laser modes; Optical fiber communication; Quantum well devices; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734146
