DocumentCode
2412129
Title
The effect of Radon on soft error rates for wire bonded memories
Author
Wong, Richard ; Su, Peng ; Wen, Shi-Jie ; McNally, Brendan Dwyer ; Coleman, Stuart
fYear
2010
fDate
17-21 Oct. 2010
Firstpage
133
Lastpage
134
Abstract
Soft errors caused by different high energetic radiation particles, such as alpha, neutron, thermal neutron, proton, and heavy ions are well studied and understood. But few studies have been complete on effect of Radon on IC components soft error. Complicating matters, Radon a naturally occurring radioactive gas could diffuse into and through the different IC package materials and emit alpha particles as the gas atom and its progeny decay. While the diffusion constant and solubility of Radon in these materials are not well known, these decays could cause soft errors if they occur in regions near sensitive component nodes. Furthermore, different geographic location has different concentration of Radon. If Radon contributes to IC components soft error, its affect should be quantified. This paper reports the soft error test result in an accelerated Radon ambient and concludes Radon impact on soft errors.
Keywords
alpha-particle effects; integrated memory circuits; lead bonding; neutron effects; proton effects; radiation hardening (electronics); radon; alpha-particle effects; diffusion constant; gas atom; heavy ions; progeny decay; proton effects; soft error rates; thermal neutron effects; wire bonded memories; Alpha particles; Error analysis; Materials; Monitoring; Neutrons; Sea measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location
Stanford Sierra, CA
ISSN
1930-8841
Print_ISBN
978-1-4244-8521-5
Type
conf
DOI
10.1109/IIRW.2010.5706506
Filename
5706506
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