• DocumentCode
    2412129
  • Title

    The effect of Radon on soft error rates for wire bonded memories

  • Author

    Wong, Richard ; Su, Peng ; Wen, Shi-Jie ; McNally, Brendan Dwyer ; Coleman, Stuart

  • fYear
    2010
  • fDate
    17-21 Oct. 2010
  • Firstpage
    133
  • Lastpage
    134
  • Abstract
    Soft errors caused by different high energetic radiation particles, such as alpha, neutron, thermal neutron, proton, and heavy ions are well studied and understood. But few studies have been complete on effect of Radon on IC components soft error. Complicating matters, Radon a naturally occurring radioactive gas could diffuse into and through the different IC package materials and emit alpha particles as the gas atom and its progeny decay. While the diffusion constant and solubility of Radon in these materials are not well known, these decays could cause soft errors if they occur in regions near sensitive component nodes. Furthermore, different geographic location has different concentration of Radon. If Radon contributes to IC components soft error, its affect should be quantified. This paper reports the soft error test result in an accelerated Radon ambient and concludes Radon impact on soft errors.
  • Keywords
    alpha-particle effects; integrated memory circuits; lead bonding; neutron effects; proton effects; radiation hardening (electronics); radon; alpha-particle effects; diffusion constant; gas atom; heavy ions; progeny decay; proton effects; soft error rates; thermal neutron effects; wire bonded memories; Alpha particles; Error analysis; Materials; Monitoring; Neutrons; Sea measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
  • Conference_Location
    Stanford Sierra, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-8521-5
  • Type

    conf

  • DOI
    10.1109/IIRW.2010.5706506
  • Filename
    5706506