Title :
Semiconductor lasers with 2.5 Gb/s operation at 200/spl deg/C
Author :
Vail, E.C. ; O´Brien, S. ; Ziari, M. ; Lang, R.
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
We demonstrate the first high speed InGaAs QW semiconductor lasers at 200°C. For p-p drive currents of 30 mA and 7.5 mA, operation at 2.5 Gb/s and 1.2 Gb/s are demonstrated, respectively.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; high-speed optical techniques; indium compounds; quantum well lasers; 2.5 Gbit/s; 200 C; 30 mA; 7.5 mA; InGaAs; high speed InGaAs QW semiconductor lasers; p-p drive currents; Frequency; Semiconductor lasers; Signal analysis; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734148
