Title :
Ultra-low chirp EAM-DFB-LD for 2.5 Gbps-700 km penalty-free transmission
Author :
Miyazaki, Y. ; Ishimura, E. ; Takagi, K. ; Kuramoto, K. ; Tada, H. ; Matsumoto, K. ; Takiguchi, T. ; Kadowaki, T. ; Fujiwara, M. ; Takemoto, A. ; Higuchi, H.
Author_Institution :
Div. of High Frequency & Opt. Semicond., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
We have fabricated a distributed-feedback laser diode (DFB-LD) with monolithically integrated electroabsorption modulator (EAM), which has small chirp characteristics (effective /spl alpha/ parameter =0.2). 2.5 Gbps-700 km penalty-free transmission without any intentional pre-biasing or self phase modulation effect is successfully demonstrated using the EAM-LD.
Keywords :
III-V semiconductors; chirp modulation; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical transmitters; quantum well lasers; /spl alpha/ parameter; 700 km; DFB-LD; EAM-DFB-LD; InGaAsP; chirp characteristics; distributed-feedback laser diode; monolithically integrated electroabsorption modulator; penalty-free transmission; pre-biasing; self phase modulation effect; ultra-low chirp; Chirp; Erbium-doped fiber amplifier; Optical attenuators; Optical feedback; Optical fiber amplifiers; Optical films; Optical modulation; Optical transmitters; Quantum well devices; Voltage;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734150
