DocumentCode :
2412250
Title :
Qualification of 128 Gb MLC NAND Flash for SMAP space mission
Author :
Heidecker, Jason ; White, Mark ; Cooper, Mark ; Sheldon, Douglas ; Irom, Farokh ; Nguyen, Duc
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear :
2010
fDate :
17-21 Oct. 2010
Firstpage :
145
Lastpage :
148
Abstract :
Screening and qualification of a 128 Gb multi-level-cell (MLC) NAND Flash device for the Soil Moisture Passive Active (SMAP) mission (http://smap.jpl.nasa.gov/) is presented here. The MLC technology used in this high density device requires testing above and beyond the typical space test flow.
Keywords :
NAND circuits; flash memories; space vehicle electronics; testing; SMAP Space Mission; Soil Moisture Passive Active mission; high density device; multilevel-cell NAND flash device; space test flow; storage capacity 128 Gbit; Bit error rate; Flash memory; Qualifications; Radiation effects; SMAP mission; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
Stanford Sierra, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-8521-5
Type :
conf
DOI :
10.1109/IIRW.2010.5706510
Filename :
5706510
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2412250
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