3D simulation of charge collection and SEU of 0.13µm partially depleted SOI SRAM

In this paper, the charge collection and parasitic bipolar effect of SOI NMOS devices in case of different ion strike locations have been analyzed through 3D simulation. The simulation results show that the strike at drain region can cause charge collection comparable with the collection induced by strike at the gate region above body. Single event upset (SEU) simulations of SRAM cell have been conducted. Results indicate that the reverse-biased drain region is sensitive to SEU, as well as the gate region. The largest amount of charge collection in device and the lowest LET threshold of SEU in SRAM both occur when the ion strikes at the drain/body junction area and passes through the centre part of the reverse junction.