Optimization of VCSEL with an integrated resonant photodetector

Author

Lim, S.F. ; Lascola, K.M. ; Wupen Yuen ; Chang-Hasnain, C.J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

101

Lastpage

102

Abstract

We show that the intracavity detector-VCSEL performance depends critically on the relative alignment of the Fabry-Perot wavelength and the quantum-well absorber band edge. By strategic design, we obtain well-matched behavior of the internal and external detectors-up to 5 times threshold. Comprehensive modeling agrees with experimental results.

Keywords

integrated optoelectronics; laser theory; optical design techniques; optimisation; photodetectors; quantum well lasers; semiconductor device models; surface emitting lasers; Fabry-Perot wavelength; VCSEL optimisation; comprehensive modeling; external detectors; integrated resonant photodetector; internal detectors; intracavity detector-VCSEL performance; quantum-well absorber band edge; relative alignment; strategic design; well-matched behavior; Absorption; Detectors; Fabry-Perot; Monitoring; Power generation; Quantum well lasers; Resonance; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734157

Filename

734157