Title :
Complexities of the non-volatile memory reliability testing caused by the test structure
Author :
Keshavarz, Abdol A. ; Spawn, Gregory S. ; Reyes, Nelson Delos ; Mincitar, Rogelio ; Dion, Laurent F.
Author_Institution :
Reliability & Process Control Dept., STMicroelectronics, Phoenix, AZ, USA
Abstract :
This paper shows the sensitivity of the non-volatile memory reliability test to the test structure design and the pad sharing with other devices. Detailed results are presented to show how other devices on the same test structure can interfere with the EEPROM endurance test results and cause dramatic shifts in the data.
Keywords :
EPROM; integrated circuit reliability; integrated circuit testing; random-access storage; EEPROM endurance test; nonvolatile memory reliability testing; pad sharing; structure design; EPROM; Logic gates; Nonvolatile memory; Programming; Reliability; Threshold voltage; Transistors;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
Stanford Sierra, CA
Print_ISBN :
978-1-4244-8521-5
DOI :
10.1109/IIRW.2010.5706515
