Title :
Hybrid distributed amplifier using MCM-D based on selectively anodized aluminium substrate
Author :
Sohn, Bo-In ; Shin, Seong-Ho ; Kwon, Young-Se
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Daejeon
Abstract :
This paper presents a hybrid four-stage distributed amplifier using thin film multi-chip module deposited(MCM-D) based on selectively anodized aluminium substrate with fully embedded passives. Four bare GaAs heterojunction field effect transistors are attached on the all passive-integrated aluminium substrate and interconnected to other devices by wire-bonding. The hybrid distributed amplifier had a unity gain maximum cut-off frequency of 15 GHz, a maximum gain of 8.9 dB over 0.6 GHz to 14.2 GHz band, and a maximum gain flatness of 7.4plusmn1.5 dB over 0.6 GHz to 14.2 GHz bandwidth. The total size is 2.8 mm times 5.5 mm including the bias circuitries and bonding pads.
Keywords :
III-V semiconductors; aluminium; anodisation; field effect transistor circuits; field effect transistors; gallium arsenide; hybrid integrated circuits; lead bonding; microwave amplifiers; microwave integrated circuits; multichip modules; passive networks; semiconductor heterojunctions; thin film circuits; wideband amplifiers; Al; GaAs; bias circuitries; bonding pads; frequency 15 GHz; gain 8.9 dB; heterojunction field effect transistors; hybrid four-stage distributed amplifier; passive-integrated aluminium substrate; selectively anodized aluminium substrate; size 2.8 mm; size 5.5 mm; thin film multichip module deposition; wire-bonding; Aluminum; Cutoff frequency; Distributed amplifiers; FETs; Gain; Gallium arsenide; Heterojunctions; Integrated circuit interconnections; Sputtering; Substrates;
Conference_Titel :
Microwave Conference, 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-001-9
DOI :
10.1109/EUMC.2007.4405520
