Author :
Grasser, Tibor ; Lloyd, John
Author_Institution :
Tech. Univ. Wien, Vienna, Austria
Abstract :
The tutorial covers the following: [Reliability and degradation mechanism of AlGaN/GaN high electron mobility transistors, Recent results from (single) defect spectroscopy and a discussion of controversial topics, Radiation-induced soft errors: status quo and key challenges, Latest developments in failure modeling of electromigration and ILD TDDB, Hot-carrier degradation issues in advanced CMOS nodes, TDDB physics: transitioning from silica to high-k gate dielectrics.]
Keywords :
CMOS integrated circuits; III-V semiconductors; aluminium compounds; electromigration; failure analysis; gallium compounds; high electron mobility transistors; high-k dielectric thin films; hot carriers; low-k dielectric thin films; radiation effects; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; CMOS device degradation; ILD TDDB; electromigration failure modeling; high electron mobility transistor reliability; high-k gate dielectrics; hot-carrier degradation; low-k interlevel dielectric; radiation-induced soft error; single defect spectroscopy; time dependent dielectric breakdown;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
Fallen Leaf, CA
Print_ISBN :
978-1-4244-8521-5
DOI :
10.1109/IIRW.2010.5706516
