Single-mode and multimode 2D VCSEL arrays for parallel optical interconnects

Author

King, R. ; Wiedenmann, D. ; Schnitzer, P. ; Jager, R. ; Michalzik, R. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

103

Lastpage

104

Abstract

We present bottom-emitting 4×8 InGaAs VCSEL arrays with homogeneous output characteristics ideally suited for transmitter action in short-distance optical interconnects. Conversion efficiencies of single-mode and multimode devices at an optical output power of 1 mW are 24% and 29%, respectively, with peak single-mode powers of 3 mW.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; optical interconnections; optical transmitters; parallel architectures; semiconductor laser arrays; surface emitting lasers; 1 mW; 24 percent; 29 percent; 3 mW; InGaAs; bottom-emitting 4/spl times/8 InGaAs VCSEL arrays; conversion efficiencies; homogeneous output characteristics; multimode 2D VCSEL arrays; multimode devices; optical output power; parallel optical interconnects; peak single-mode powers; short-distance optical interconnects; single-mode 2D VCSEL arrays; single-mode devices; transmitter action; Bandwidth; Laser modes; Laser noise; Masers; Optical arrays; Optical interconnections; Optical modulation; Power generation; Power lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734158

Filename

734158