A single chip 2-20 GHz T/R module

Author

Schindler, M.J. ; Chu, S.L. ; Kazior, T.E. ; Bertrand, A.M. ; Simon, K.M.

Author_Institution

Raytheon Co., Lexington, MA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

117

Abstract

A single chip 2-20-GHz transmit/receive (T/R) module has been demonstrated. This MMIC (monolithic microwave integrated circuit) included a four-stage power amplifier chain, a four-stage low-noise amplifier chain, and two T/R switches. A selective ion implantation process was used. One implant profile was optimized for low-noise operation, and a second was optimized for power performance. All circuits were designed to be relatively insensitive to process variations to ensure adequate yield, despite the complexity of the chip. Distributed amplifiers were used throughout, and the T/R switches used a standard series-shunt FET configuration. All circuits were miniaturized to keep the total chip size small. The entire T/R is only 0.143 in*0.193 in (3.6 mm*4.9 mm).<>

Keywords

MMIC; doping profiles; field effect integrated circuits; integrated circuit technology; ion implantation; microwave amplifiers; modules; 0.143 in; 0.193 in; 2 to 20 GHz; MMIC; SHF; T/R module; T/R switches; chip size; distributed amplifiers; four-stage low-noise amplifier chain; four-stage power amplifier chain; implant profile; insensitive to process variations; monolithic microwave integrated circuit; selective ion implantation process; single chip module; standard series-shunt FET configuration; transmit receive module; Distributed amplifiers; Implants; Ion implantation; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99537

Filename

99537