Title :
Designing better AlGaInP based visible VCSELs
Author :
Sale, T.E. ; Reilly, E.P.O. ; Mackett, P. ; Onischenko, A.O. ; Adams, A.R. ; Woodhead, J. ; Button, C.C. ; Pinches, S.M.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
AlGaInP edge emitting lasers with AlGaAs cladding mimic the GaInP SQW active region of surface-emitters. We use these to determine limitations in the absence of cavity effects and predict much improved visible VCSELs will now be possible.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; surface emitting lasers; AlGaAs cladding; AlGaAs cladding mimic; AlGaInP; AlGaInP based visible VCSELs; AlGaInP edge emitting lasers; GaInP; GaInP SQW active region; active region; cavity effects; surface-emitters; visible VCSELs; Electrons; Gallium arsenide; Heating; Hysteresis; Optical bistability; Optical saturation; Optical switches; Temperature dependence; Ultraviolet sources; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734161
