Title :
Negative differential resistance of an intracavity voltage-controlled absorber in a vertical cavity surface emitting laser
Author :
Stone, R.J. ; Hudgings, J.A. ; Lim, S.F. ; Li, G.S. ; Lau, K.Y. ; Chang-Hasnain, C.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
We present the first detailed investigation of the sharp negative differential resistance (NDR) within a VCSEL intracavity quantum well absorber. The intensity dependent NDR is governed by the position of the Fabry-Perot wavelength relative to the absorber excitonic peak.
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; optical saturable absorption; quantum well lasers; surface emitting lasers; Fabry-Perot wavelength; InGaAs; VCSEL intracavity quantum well absorber; absorber excitonic peak; intensity dependent NDR; intracavity voltage-controlled absorber; negative differential resistance; sharp negative differential resistance; vertical cavity surface emitting laser; Electric resistance; Electromagnetic wave absorption; Fabry-Perot; Photoconductivity; Quantum well lasers; Surface emitting lasers; Surface resistance; Vertical cavity surface emitting lasers; Voltage; Wavelength measurement;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734162
