Title :
Features of activity transistors in a structure of a very high frequency of generators with an external feedback
Author :
Mazeeva, H.M. ; Fursaev, M.A.
Author_Institution :
Saratov State Tech. Univ., Russia
Abstract :
Analysis of electric regimes of transistors in composition of SHF generations with external back connection and of limitations on values of parameters, which characterize these regime. Basis of necessity of insert loosing elements in back connection of these generations.
Keywords :
feedback; microwave generation; microwave transistors; SHF generator; activity transistor; back connection; external feedback; Character generation; Frequency; Nonlinear optics; Optical propagation; Optical pulses; Optimized production technology; Particle beam optics; Pattern analysis; Pattern formation; Resonance;
Conference_Titel :
Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
Conference_Location :
Saratova, Russia
Print_ISBN :
5-7433-1065-3
DOI :
10.1109/APEDE.2002.1044895
