DocumentCode :
2412576
Title :
Optical near field probe action in a microdisk laser with /spl lambda//10 resolution
Author :
Yamada, H. ; Sakai, A. ; Fujita, M. ; Baba, T.
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
fYear :
1998
fDate :
4-8 Oct. 1998
Firstpage :
129
Lastpage :
130
Abstract :
We experimentally demonstrated the near field probe action in a 1.6 μm GaInAsP microdisk injection laser. A high spatial resolution of 164 nm, which was nearly 1/10 of the lasing wavelength, was evaluated for a δ-function-like object.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; microdisc lasers; optical resolving power; semiconductor lasers; /spl delta/-function-like object; /spl lambda//10 resolution; 1.6 mum; GaInAsP; GaInAsP microdisk injection laser; high spatial resolution; lasing wavelength; microdisk laser; optical near field probe action; Fiber lasers; High speed optical techniques; Laser modes; Laser transitions; Needles; Optical modulation; Optical scattering; Optical surface waves; Probes; Spatial resolution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
ISSN :
0899-9406
Print_ISBN :
0-7803-4223-2
Type :
conf
DOI :
10.1109/ISLC.1998.734170
Filename :
734170
Link To Document :
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