Title :
Quasi-two-dimension physic-topological model of field-effect transistors (FETs) in view of the self-heating effect
Author :
Sivyakov, D.B. ; Boldirev, D.R.
Author_Institution :
Saratov State Tech. Univ., Russia
Abstract :
In field-effect transistors of average and high power the influence of power, pick out in the channel on transistor characteristics is observed. This phenomenon is called the self-heating effect. The quasi-two-dimension physic-topological model of FETs in view of the self-heating effect is offered in the report.
Keywords :
field effect transistors; semiconductor device models; field effect transistor; quasi-two-dimensional physical-topological model; self-heating effect; FETs; Heating; Helium;
Conference_Titel :
Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
Conference_Location :
Saratova, Russia
Print_ISBN :
5-7433-1065-3
DOI :
10.1109/APEDE.2002.1044901
