DocumentCode
2412619
Title
Reliability improvement of 980 nm laser diodes with a new facet passivation process
Author
Horie, H. ; Ohta, H. ; Fujimori, T.
Author_Institution
Opto-Electron. Res. & Technol. Dev. Center, Mitsubishi Chem. Corp., Ibaraki, Japan
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
133
Lastpage
134
Abstract
A newly developed facet passivation method producing highly reliable, high output power 980 nm InGaAs MQW laser diodes (LDs) is described. Even with facet cleavage in air, the devices exhibit a maximum output of 500 mW. Aging tests at 200-250 mW showed very good performance.
Keywords
III-V semiconductors; ageing; gallium arsenide; indium compounds; infrared sources; laser reliability; laser transitions; life testing; optical fabrication; optical testing; passivation; quantum well lasers; semiconductor device reliability; semiconductor device testing; 200 to 250 mW; 500 mW; 980 nm; InGaAs; InGaAs MQW laser diodes; aging tests; facet cleavage; facet passivation process; high output power; highly reliable; laser diodes; laser reliability improvement; maximum output; very good performance; Aging; Chemical processes; Chemical technology; Coatings; Degradation; Dielectric materials; Diode lasers; Gallium arsenide; Optical materials; Passivation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734172
Filename
734172
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