• DocumentCode
    2412645
  • Title

    DFB laser diodes operating at 785 and 852 nm

  • Author

    Gulgazov, V. ; Zhao, H. ; Major, J.S., Jr. ; Osinski, J.S.

  • Author_Institution
    SDL Inc., San Jose, CA, USA
  • fYear
    1998
  • fDate
    4-8 Oct. 1998
  • Firstpage
    137
  • Lastpage
    138
  • Abstract
    DFB laser diodes operating at 785 and 852 nm, with threshold currents of 25 and 13 mA, respectively, slope efficiency of 0.8 W/A and thermal tuning of 0.06-0.07 nn/°C have been described. Preliminary lifetest data are presented.
  • Keywords
    distributed feedback lasers; infrared sources; laser transitions; laser tuning; life testing; optical testing; semiconductor device testing; semiconductor lasers; 13 mA; 25 mA; 785 nm; 852 nm; DFB laser diodes; laser testing; laser tuning; lifetest data; slope efficiency; thermal tuning; threshold current; Coatings; Degradation; Diode lasers; Distributed feedback devices; Frequency; Laser feedback; Laser tuning; Power generation; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
  • Conference_Location
    Nara, Japan
  • ISSN
    0899-9406
  • Print_ISBN
    0-7803-4223-2
  • Type

    conf

  • DOI
    10.1109/ISLC.1998.734174
  • Filename
    734174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2412645