Title :
DFB laser diodes operating at 785 and 852 nm
Author :
Gulgazov, V. ; Zhao, H. ; Major, J.S., Jr. ; Osinski, J.S.
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
DFB laser diodes operating at 785 and 852 nm, with threshold currents of 25 and 13 mA, respectively, slope efficiency of 0.8 W/A and thermal tuning of 0.06-0.07 nn/°C have been described. Preliminary lifetest data are presented.
Keywords :
distributed feedback lasers; infrared sources; laser transitions; laser tuning; life testing; optical testing; semiconductor device testing; semiconductor lasers; 13 mA; 25 mA; 785 nm; 852 nm; DFB laser diodes; laser testing; laser tuning; lifetest data; slope efficiency; thermal tuning; threshold current; Coatings; Degradation; Diode lasers; Distributed feedback devices; Frequency; Laser feedback; Laser tuning; Power generation; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734174
