Title :
650 nm lasers with narrow far-field divergence
Author :
Smowton, P.M. ; Summers, H.D. ; Berry, G. ; Blood, P. ; Button, C.C.
Author_Institution :
Dept. of Phys. & Astron., Wales Univ., Cardiff, UK
Abstract :
We have reduced the measured vertical far-field divergence in a 650 nm strained SQW laser from 35/spl deg/ to 21/spl deg/ (FWHM), without changing the threshold current, operating voltage or thermal impedance, by introducing additional optical mode expansion layers.
Keywords :
laser beams; laser modes; laser transitions; quantum well lasers; 650 nm; 650 nm lasers; additional optical mode expansion layers; narrow far-field divergence; operating voltage; strained SQW laser; thermal impedance; threshold current; vertical far-field divergence; Impedance; Laser modes; Laser theory; Leakage current; Optical refraction; Optical variables control; Optical waveguides; Stimulated emission; Thermal expansion; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734176
