Title :
High power and short wavelength red DFB lasers
Author :
Pezeshki, B. ; Hagberg, M. ; Zelinski, M. ; Kolev, E.
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
We demonstrate the shortest wavelength and highest power red InGaP QW DFB lasers. Operating from 635 nm to 680 nm, these devices provide single mode powers up to 50 mW, and are finding applications in interferometry, spectroscopy and optical storage.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser beam applications; laser transitions; light interferometry; optical storage; quantum well lasers; spectroscopic light sources; 50 mW; 635 to 680 nm; InGaP; InGaP QW DFB lasers; high power short wavelength red DFB lasers; interferometry; optical storage; single mode powers; spectroscopy; Costs; Fabry-Perot; Gratings; Holographic optical components; Holography; Laser modes; Optical interferometry; Optical refraction; Power lasers; Semiconductor lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734177
