DocumentCode
2412711
Title
InGaAlP Zn-diffused window structure laser diodes fabricated by using highly Zn-doped GaAs layers
Author
Watanabe, M. ; Ito, Y. ; Shiozawa, W. ; Okada, M. ; Horiuchi, O. ; Tanaka, A. ; Gen-Ei, K. ; Shimada, N. ; Okuda, H. ; Fukuoka, K.
Author_Institution
Semicond. Group, Toshiba Corp., Kawasaki, Japan
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
147
Lastpage
148
Abstract
685 nm InGaAlP window structure laser diodes have been obtained with a new Zn diffusion method utilizing highly Zn-doped GaAs layers as a Zn source. The method has some advantages and superior controllability.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; laser accessories; optical fabrication; optical windows; ridge waveguides; semiconductor lasers; waveguide lasers; 685 nm; GaAs; GaAs:Zn; InGaAlP; Zn source; Zn-diffused window structure laser diodes; controllability; fabrication; highly Zn-doped GaAs layers; laser diodes; window structure; Annealing; Atomic beams; Chemical lasers; DVD; Diode lasers; Gallium arsenide; Indium tin oxide; Mirrors; Quantum well devices; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734179
Filename
734179
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