Title :
1.3 /spl mu/m GaInAsP lasers integrated with monitoring photodiodes through highly reflective semiconductor/air Bragg reflector (SABAR)
Author :
Mukaihara, T. ; Yamanaka, N. ; Iwai, N. ; Funabashi, M. ; Ishikawa, T. ; Kasukawa, A.
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Japan
Abstract :
We have demonstrated an integration with a laser and a monitoring photodiode through a highly reflective semiconductor/air Bragg reflector (SABAR), for the first time. Experimentally obtained SABAR reflectivity is as high as 80%. Threshold characteristics of ridge waveguide lasers and photocurrent behavior of monitor photodiodes are evaluated.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; integrated optoelectronics; laser mirrors; laser transitions; monitoring; photodiodes; reflectivity; ridge waveguides; semiconductor lasers; waveguide lasers; 1.3 mum; GaInAsP lasers; SABAR reflectivity; highly reflective semiconductor/air Bragg reflector; integrated optoelectronics; monitoring photodiodes; photocurrent behavior; ridge waveguide lasers; threshold characteristics; Monitoring; Photodiodes; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734181
