DocumentCode
2412842
Title
1.5 /spl mu/m buried heterostructure InGaAsP/InP MQW laser with native-oxidized InAlAs current blocking layer
Author
Wang Zhi Jie ; Chua Soo Jin ; Zhou Fan ; Zhu Hong Liang ; Wang Wei ; Wu Rong Han
Author_Institution
Inst. of Mater. Res. & Eng., Nat. Univ. of Singapore, Singapore
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
157
Lastpage
158
Abstract
We first proposed and realized a 1.5 /spl mu/m buried hetero-structure InGaAsP-InP MQW laser with a native-oxidized InAlAs current block layer (NO-InAlAs-BH). The primary results are Ith=5.6 mA, slope efficiency /spl eta/=0.23 mW/mA and an linear output power surpassing 22.5 mW.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; oxidation; quantum well lasers; 1.5 mum; 22.5 mW; 5.6 mA; InAlAs; InGaAsP-InP; InGaAsP-InP MQW laser; InGaAsP/InP MQW laser; buried heterostructure; linear output power; native-oxidized InAlAs current block layer; native-oxidized InAlAs current blocking layer; slope efficiency; Acceleration; Indium compounds; Indium phosphide; Laser theory; Leakage current; Oxidation; P-n junctions; Power generation; Quantum well devices; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734184
Filename
734184
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