Title :
Demonstration of optical noise reduction using nonlinear absorption in semiconductor laser amplifier
Author :
Tsurusawa, M. ; Usami, M. ; Matsushima, Y.
Author_Institution :
KDD Kamifukuoka R&D Labs., Saitama, Japan
Abstract :
We propose a new way to use the InGaAs MQW semiconductor laser amplifier as an ultra fast noise reduction device. We have successfully confirmed the receiver sensitivity improvement for 0.5 dB in 5 Gb/s NRZ signal by using this principle.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser noise; light absorption; nonlinear optics; optical receivers; quantum well lasers; sensitivity; 5 Gbit/s; Gb/s NRZ signal; InGaAs; InGaAs MQW semiconductor laser amplifier; nonlinear absorption; optical noise reduction; receiver sensitivity improvement; semiconductor laser amplifier; ultra fast noise reduction device; Absorption; Indium gallium arsenide; Laser noise; Noise reduction; Optical noise; Optical receivers; Optical signal processing; Quantum well devices; Semiconductor lasers; Semiconductor optical amplifiers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734187
