DocumentCode
2412902
Title
High temperature GaInAs/AlGaAs lasers with improved carrier confinement due to short period superlattice quantum well barriers
Author
Schtafer, F. ; Mayer, B. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Tech. Phys., Wurzburg Univ., Germany
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
165
Lastpage
166
Abstract
The high temperature properties of GaInAs-AlGaAs lasers were improved by using short period superlattice barriers. Record T/sub 0/-values of 320 K (up to 75/spl deg/C) and maximum operating temperatures above 240/spl deg/C could be achieved.
Keywords
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; indium compounds; quantum well lasers; semiconductor superlattices; 240 C; 320 K; 75 C; GaInAs-AlGaAs; T/sub 0/-values; high temperature GaInAs-AlGaAs lasers; high temperature properties; improved carrier confinement; maximum operating temperatures; short period superlattice barriers; short period superlattice quantum well barriers; Carrier confinement; Gallium arsenide; Laser stability; Performance loss; Power lasers; Quantum well lasers; Superlattices; Temperature dependence; Thermionic emission; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734188
Filename
734188
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