DocumentCode
2412958
Title
Gain spectra measurement of strained and strain compensated InGaAsP/AlGaAs laser structures for /spl lambda//spl ap/800 nm using a new variable stripe length method
Author
Oster ; Bugge, F. ; Erbert, G. ; Rechenberg, I. ; Thies, A. ; Wenzel, H.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
169
Lastpage
170
Abstract
Gain spectra are determined by a new variable stripe length method using current injection. The method is used for investigations of compressively strained and strain compensated InGaAsP-AlGaAs laser structures for wavelengths near 800 nm.
Keywords
III-V semiconductors; aluminium compounds; compensation; gallium arsenide; gallium compounds; indium compounds; infrared sources; infrared spectra; laser transitions; laser variables measurement; quantum well lasers; 800 nm; InGaAsP-AlGaAs; QW lasers; current injection; gain spectra measurement; strain compensated InGaAsP-AlGaAs laser structures; strained InGaAsP-AlGaAs laser structures; variable stripe length method; Capacitive sensors; Current density; Current measurement; Gain measurement; Laser excitation; Length measurement; Polarization; Stimulated emission; Strain measurement; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734190
Filename
734190
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