Title :
A novel current sourced ultrasonic carrier PWM converter with the IGBT in the near future
Author :
Nishimura, Toshi Hiro ; Kiwaki, Hisakatsu ; Maranesi, Piero G.
Author_Institution :
Dept. of Electr. Eng., Oita Univ., Japan
Abstract :
A novel current sourced ultrasonic carrier PWM (pulse-width modulated) converter using an insulated gate bipolar transistor (IGBT) with self-aligned DMOS structure is described. The sinusoidal waveform compared with the ultrasonic corrected triangular waveform method is used as the PWM pulse pattern to operate the converter. Because of the ultrasonic PWM carrier frequency, the converter transforms the AC line current waveform into the sinusoidal waveform, the filter connected to the AC side of the converter can be reduced in size, and the displacement factor is improved. When the PWM carrier frequency f c is=20.64 kHz, the displacement factor is improved compared with fc=4.08 kHz
Keywords :
bipolar transistors; electric current control; insulated gate field effect transistors; power convertors; pulse width modulation; ultrasonic applications; 20.64 kHz; AC line current waveform; IGBT; current sourced ultrasonic carrier PWM converter; insulated gate bipolar transistor; self-aligned DMOS structure; sinusoidal waveform; Band pass filters; Circuits; Frequency conversion; Insulated gate bipolar transistors; Low pass filters; Power harmonic filters; Power semiconductor switches; Pulse width modulation; Pulse width modulation converters; Semiconductor devices;
Conference_Titel :
Industrial Electronics Society, 1989. IECON '89., 15th Annual Conference of IEEE
Conference_Location :
Philadelphia, PA
DOI :
10.1109/IECON.1989.69622
