Far-infrared spontaneous emission from quantum dot and quantum well structures accompanying near-infrared lasing

Author

Vorobjev, L.E. ; Firsov, D.A. ; Shalygin, V.A. ; Tulupenko, V.N. ; Shernyakov, Yu.M. ; Egorov, A.Yu. ; Zhukov, A.E. ; Kovsh, A.R. ; Kop´ev, P.S. ; Kochnev, I.V. ; Ledentsov, N.N. ; Maximov, M.V. ; Ustinov, V.M. ; Alferov, Zh.I.

Author_Institution

St. Petersburg State Tech. Univ., Russia

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

185

Lastpage

186

Abstract

Spontaneous radiation from laser structures with quantum dots connected with hole and electron interlevel transitions was found and investigated. The radiation is observed only under simultaneous stimulated interband emission and has a similar current threshold.

Keywords

infrared sources; laser transitions; quantum well lasers; semiconductor quantum dots; semiconductor quantum wells; spontaneous emission; IR sources; current threshold; electron interlevel transitions; far-infrared spontaneous emission; hole interlevel transitions; laser transitions; near-infrared lasing; quantum dot lasers; quantum well lasers; quantum well structures; simultaneous stimulated interband emission; Charge carrier processes; Finite impulse response filter; Laser transitions; Quantum cascade lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Spontaneous emission; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734198

Filename

734198