Title :
Gas source MBE growth of TlInGaP and TlInGaAs for the application to temperature-insensitive wavelength semiconductor lasers
Author :
Asahi, H. ; Takenaka, K. ; Koh, H. ; Asami, K. ; Gonda, S. ; Oe, K.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
This paper reports the gas source MBE growth of new semiconductor TlInGaP and TlInGaAs layers on InP substrates and the observation of very low temperature-dependence of bandgap energy for these layers.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; energy gap; semiconductor growth; semiconductor lasers; thallium compounds; InP; InP substrates; TlInGaAs; TlInGaP; bandgap energy; gas source MBE growth; temperature-insensitive wavelength semiconductor lasers; very low temperature-dependence; Diffraction; Energy measurement; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Photonic band gap; Semiconductor lasers; Substrates; Temperature dependence; Wavelength division multiplexing;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734199
