Light-stimulated ionic etching of semiconductor heterostructures

Author

Serdobintsev, A.A. ; Karasev, S.A. ; Rokakh, A.G. ; Stetsura, S.V. ; Zhukov, A.G.

Author_Institution

Chernyshevski Saratov State Univ., Ukraine

fYear

2002

fDate

18-19 Sept. 2002

Firstpage

250

Lastpage

254

Abstract

For study of impurities distribution in film hetero-phase photoresistors the method of the secondary ionic mass-spectrometry was used. Influence of illumination by visible light on an output of ions of cadmium and lead is revealed. It being found that the output of cadmium ions at illumination decreases, but lead ions increases. The increase of an output of lead ions contacts to that lead contains mainly in the narrow-gap sites of the photoconductor being a drain of photoexcited electron-hole pairs.

Keywords

impurity distribution; narrow band gap semiconductors; photoconducting materials; photoresistors; secondary ion mass spectra; semiconductor heterojunctions; sputter etching; Cd; Pb; cadmium ions; impurity distribution; lead ions; light-stimulated ionic etching; narrow gap semiconductor; photoconductor; photoexcited electron-hole pairs; secondary ionic mass spectrometry; semiconductor heterostructure; thin film heterophase photoresistor; Gallium arsenide;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on

Conference_Location

Saratova, Russia

Print_ISBN

5-7433-1065-3

Type

conf

DOI

10.1109/APEDE.2002.1044937

Filename

1044937