Title :
Fabrication and modeling of optical interconnects using selective area growth metalorganic chemical vapor deposition
Author :
Alam, M.A. ; People, R. ; Sputz, S.K. ; Hybertsen, M.S. ; Isaacs, E. ; Evans-Lutterodt, K. ; Vandenberg, J. ; Siegrist, T. ; Pernell, T.L. ; Lang, D.V. ; Chu, S.N.G. ; Johnson, J.E. ; Ketelsen, L.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A computational model for selective area growth has been verified using a comprehensive suite of experimental measurements: atomic force microscopy, optical interference microscopy, microphotoluminescence, and micro-Xray diffraction. The model then allows for constructive engineering of the material thickness and composition through manipulation of the oxide mask used in selective area growth. This can be a fundamental input to the design of optical interconnects and integrated photonic devices.
Keywords :
MOCVD; X-ray diffraction; atomic force microscopy; integrated optics; integrated optoelectronics; light interference; optical fabrication; optical interconnections; optical microscopy; photoluminescence; atomic force microscopy; composition; computational model; constructive engineering; design; fabrication; integrated photonic devices; material thickness; micro-X-ray diffraction; microphotoluminescence; optical interconnects; optical interference microscopy; oxide mask; selective area growth; selective area growth metalorganic chemical vapor deposition; Area measurement; Atom optics; Atomic force microscopy; Atomic measurements; Computational modeling; Force measurement; Optical computing; Optical device fabrication; Optical interconnections; Optical microscopy;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734204
