DocumentCode :
2413290
Title :
Defect formation and transport processes on surface of the semiconductor at electrodegradation of a system the metal-semiconductor
Author :
Scvortsov, A.A. ; Salanov, A.A.
Author_Institution :
Ulyanovsk State Univ., Russia
fYear :
2002
fDate :
18-19 Sept. 2002
Firstpage :
258
Lastpage :
259
Abstract :
The defect formation activity in a system consisting of a semiconductor wafer and a thin metallic film is passing single-pulses of a current of density j=(1...8)*10/sup 10/ A/m and duration /spl tau/=50...800 ms throught it.
Keywords :
semiconductor-metal boundaries; defect formation; electrodegradation; metal-semiconductor system; metallic thin film; semiconductor surface; transport process; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
Conference_Location :
Saratova, Russia
Print_ISBN :
5-7433-1065-3
Type :
conf
DOI :
10.1109/APEDE.2002.1044939
Filename :
1044939
Link To Document :
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