DocumentCode
2413290
Title
Defect formation and transport processes on surface of the semiconductor at electrodegradation of a system the metal-semiconductor
Author
Scvortsov, A.A. ; Salanov, A.A.
Author_Institution
Ulyanovsk State Univ., Russia
fYear
2002
fDate
18-19 Sept. 2002
Firstpage
258
Lastpage
259
Abstract
The defect formation activity in a system consisting of a semiconductor wafer and a thin metallic film is passing single-pulses of a current of density j=(1...8)*10/sup 10/ A/m and duration /spl tau/=50...800 ms throught it.
Keywords
semiconductor-metal boundaries; defect formation; electrodegradation; metal-semiconductor system; metallic thin film; semiconductor surface; transport process; Semiconductor films;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
Conference_Location
Saratova, Russia
Print_ISBN
5-7433-1065-3
Type
conf
DOI
10.1109/APEDE.2002.1044939
Filename
1044939
Link To Document