Title :
Femtosecond dynamics in semiconductor lasers: experiment and theory of ´dark pulse´ formation
Author :
Kauer, Matthias ; Heberle, A.P. ; Cleaver, J.R.A. ; Allam, J. ; Baumberg, J.J.
Author_Institution :
Microelectron. Res. Centre, Cambridge Univ., UK
Abstract :
We track the continuous-wave and femtosecond dynamics of semiconductor lasers after femtosecond pulse injection. The recirculating pulse evolves into a quasistable ultrafast ´dark pulse´, accounted for by a simple numerical model. We report high-dynamic-range femtosecond measurements on the evolution of ultrashort pulses in continuous-wave LDs. The experiments were performed on 770 nm AlGaAs and on 1.5 /spl mu/m InGaAsP edge-emitting quantum-well LDs. A single femtosecond pulse centred on the lasing wavelength is injected and the LD output is time-resolved by upconversion in a nonlinear crystal.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser beams; quantum well lasers; surface emitting lasers; 1.5 mum; 770 nm; AlGaAs; InGaAsP; LD output; continuous-wave LDs; continuous-wave dynamics; dark pulse formation; edge-emitting quantum-well LDs; femtosecond dynamics; femtosecond pulse injection; lasing wavelength; nonlinear crystal; quasistable ultrafast dark pulse; recirculating pulse; semiconductor lasers; simple numerical model; single femtosecond pulse; ultrashort pulses; upconversion; Electrons; Laboratories; Laser modes; Laser theory; Optical propagation; Optical pulses; Pulse amplifiers; Pulse measurements; Semiconductor lasers; Ultrafast optics;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734207
