Title :
Flash-based Field Programmable Gate Array Technology with Deep Trench Isolation
Author :
Han, Kyung Joon ; Chan, Nigel ; Kim, Sungrae ; Leung, Ben ; Hecht, Volker ; Cronquist, Brian ; Shum, Danny ; Tilke, Armin ; Pescini, Laura ; Stiftinger, Martin ; Kakoschke, Ronald
Author_Institution :
Actel Corp., Mountain View
Abstract :
A highly scalable flash-based Field Programmable Gate Array (FPGA) technology has been achieved with Deep Trench Isolation (DTI). The DTI allows for a reduced cell size and enables Independent Pwell (IPW) operation. The IPW allows the Fowler-Nordheim (FN) Uniform Channel Program and Erase (UCPE) with less than plusmn10 V. Additionally, the IPW approach allows a greater flexibility in the array bias scheme reducing the gate disturb during programming and eliminating all Gate-Induced Drain Leakage (GIDL) conditions. Characterization of a FPGA cell and 0.5 Mbit array with 90 nm design rules is demonstrated with excellent electrical characteristics.
Keywords :
field programmable gate arrays; flash memories; FPGA cell characterization; Fowler-Nordheim Uniform Channel Program and Erase; array bias; deep trench isolation; electrical characteristics; flash-based field programmable gate array technology; independent Pwell operation; Circuits; Diffusion tensor imaging; Electric variables; Etching; Field programmable gate arrays; Implants; Isolation technology; Logic programming; Switches; USA Councils;
Conference_Titel :
Custom Integrated Circuits Conference, 2007. CICC '07. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-1623-3
Electronic_ISBN :
978-1-4244-1623-3
DOI :
10.1109/CICC.2007.4405688