Advanced DSS MOSFET technology for ultrahigh performance applications

Author

Awano, M. ; Onoda, H. ; Miyashita, K. ; Adachi, K. ; Kawase, Y. ; Miyano, K. ; Yoshimura, H. ; Nakayama, T.

Author_Institution

Syst. LSI Div., Toshiba Corp., Yokohama

fYear

2008

fDate

17-19 June 2008

Firstpage

24

Lastpage

25

Abstract

Dopant segregated Schottky MOSFET (DSS FET) is one of the key technologies which can improve the MOSFET performance thanks to reduction of external resistance and increase of carrier injection velocity. We have found that both laser spike annealing (LSA) and fluorine co-implant can reduce external resistance furthermore, which leads to boost drive currents of DSS FETs by 7% respectively. By optimizing these technologies, high drive currents of 1310 muA/mum and 1080 muA/mum at Ioff of 100 nA/mum are achieved at 1.0 V and 0.9 V respectively, without use of high-k/metal gate.

Keywords

MOSFET; laser beam annealing; DSS MOSFET technology; carrier injection velocity; dopant segregated Schottky MOSFET; drive currents; external resistance reduction; laser spike annealing; voltage 0.9 V; voltage 1.0 V; Capacitance; Decision support systems; Degradation; FETs; High K dielectric materials; High-K gate dielectrics; Hot carrier injection; Implants; MOSFET circuits; Nitrogen;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2008 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1802-2

Electronic_ISBN

978-1-4244-1803-9

Type

conf

DOI

10.1109/VLSIT.2008.4588549

Filename

4588549