Title :
Advanced DSS MOSFET technology for ultrahigh performance applications
Author :
Awano, M. ; Onoda, H. ; Miyashita, K. ; Adachi, K. ; Kawase, Y. ; Miyano, K. ; Yoshimura, H. ; Nakayama, T.
Author_Institution :
Syst. LSI Div., Toshiba Corp., Yokohama
Abstract :
Dopant segregated Schottky MOSFET (DSS FET) is one of the key technologies which can improve the MOSFET performance thanks to reduction of external resistance and increase of carrier injection velocity. We have found that both laser spike annealing (LSA) and fluorine co-implant can reduce external resistance furthermore, which leads to boost drive currents of DSS FETs by 7% respectively. By optimizing these technologies, high drive currents of 1310 muA/mum and 1080 muA/mum at Ioff of 100 nA/mum are achieved at 1.0 V and 0.9 V respectively, without use of high-k/metal gate.
Keywords :
MOSFET; laser beam annealing; DSS MOSFET technology; carrier injection velocity; dopant segregated Schottky MOSFET; drive currents; external resistance reduction; laser spike annealing; voltage 0.9 V; voltage 1.0 V; Capacitance; Decision support systems; Degradation; FETs; High K dielectric materials; High-K gate dielectrics; Hot carrier injection; Implants; MOSFET circuits; Nitrogen;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588549
