Title :
Low threshold and high output power lasing of columnar-shaped self-assembled InAs-GaAs quantum dots
Author :
Mukai, K. ; Nakata, Y. ; Shoji, H. ; Sugawara, M. ; Ohtsubo, K. ; Sugiyama, Y. ; Yokoyama, N. ; Ishikawa, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Lasing with a low threshold current of 5.4 mA and a high output power of 110 mW was achieved using a novel closely-stacked quantum dots having high uniformity and high emission efficiency.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; 110 mW; 5.4 mA; InAs-GaAs; closely-stacked quantum dots; columnar-shaped self-assembled InAs-GaAs quantum dots; high emission efficiency; high output power; high output power lasing; high uniformity; low threshold; low threshold current; Gallium arsenide; Laboratories; Photoluminescence; Power generation; Quantum dot lasers; Quantum dots; Shape; Temperature; Threshold current; US Department of Transportation;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734211
