Title :
High performance 1.3 /spl mu/m InAsP SL-QW ACIS (Al-oxide confined inner stripe) lasers
Author :
Iwai, N. ; Mukaihara, T. ; Yamanaka, N. ; Kumada, K. ; Shimizu, H. ; Kasukawa, A.
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
A low threshold of 2 mA, a high quantum efficiency of 67% and a stable single transverse mode operations have been obtained in newly developed 1.3 μm Al-oxide confined inner stripe (ACIS) lasers with modulation-doped quantum wells.
Keywords :
III-V semiconductors; indium compounds; infrared sources; laser modes; laser stability; laser transitions; quantum well lasers; semiconductor doping; 1.3 mum; 2 mA; Al-oxide confined inner stripe lasers; InAsP; InAsP QW lasers; InAsP SL-QW ACIS; high quantum efficiency; low threshold; modulation-doped QW; modulation-doped quantum wells; stable single transverse mode operation; Epitaxial layers; Gas lasers; Laboratories; Laser modes; Laser stability; Optical waveguides; Oxidation; Research and development; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734213
