Title :
High-efficiency laterally-oxidized InGaAs-AlGaAs single-mode lasers
Author :
Heerlein, J. ; Gruber, S. ; Grabherr, M. ; Jager, R. ; Unger, P.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Abstract :
We report on results of laterally wet-oxidized laser diodes operating in single lateral and longitudinal mode. The devices achieve output powers of up to 140 mW at wall-plug efficiencies of 63% in continuous wave operation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; oxidation; quantum well lasers; 140 mW; 63 percent; InGaAs-AlGaAs; continuous wave operation; high-efficiency laterally-oxidized InGaAs-AlGaAs single-mode lasers; laterally wet-oxidized laser diodes; output powers; single longitudinal mode; wall-plug efficiencies; Diode lasers; Indium gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical devices; Optical refraction; Optical variables control; Pulse measurements; Refractive index; Stimulated emission;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734214
