DocumentCode :
2413526
Title :
Quantum cascade lasers: from band structure engineering to applications
Author :
Capasso, F.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fYear :
1998
fDate :
4-8 Oct. 1998
Firstpage :
223
Lastpage :
224
Abstract :
Quantum cascade (QC) lasers are fundamentally new semiconductor light sources in that: (1) their wavelength can be tailored over a wide range (from 3.4 /spl mu/m to 17 /spl mu/m) using the same combination of materials by a suitable choice of the active layer thicknesses (a few nanometers), (2) their optical power is greatly enhanced by the cascade effect (one injected electron creates 25-30 photons in traversing the active region). They are a textbook case of band structure engineering since all key microscopic properties (energy levels, radiative and non radiative matrix elements and their corresponding lifetimes, etc.) are designed "bottom-up" to optimize material and device performance.
Keywords :
laser theory; laser transitions; optimisation; photonic band gap; quantum well lasers; 3.4 to 17 mum; active layer thicknesses; active region; band structure engineering; cascade effect; energy levels; injected electron; lifetimes; microscopic properties; non radiative matrix elements; optical power; quantum cascade lasers; semiconductor light sources; Design engineering; Electron optics; Light sources; Microscopy; Optical materials; Power engineering and energy; Power lasers; Quantum cascade lasers; Semiconductor lasers; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
ISSN :
0899-9406
Print_ISBN :
0-7803-4223-2
Type :
conf
DOI :
10.1109/ISLC.1998.734216
Filename :
734216
Link To Document :
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