Title :
Novel Vth tuning process for HfO2 CMOS with oxygen-doped TaCx
Author :
Mizubayashi, W. ; Akiyama, K. ; Wang, W. ; Ikeda, M. ; Iwamoto, K. ; Kamimuta, Y. ; Hirano, A. ; Ota, H. ; Nabatame, T. ; Toriumi, A.
Author_Institution :
MIRAI-ASRC, AIST, Tsukuba
Abstract :
We have investigated effects of the oxygen doping into TaCx on the effective work function (Phim,eff) in TaCx/SiO2/Si and TaCx/HfO2/Si gate stacks. It has been found for the first time that the threshold voltage (Vth) is tunable within 0.5~0.6V for HfO2 MOSFETs by adjusting the oxygen content within 0~12 at. % in TaCx. Furthermore, it has been shown that unknown oxygen content in TaCx gates is a possible origin of scattering among the Phim.eff data reported.
Keywords :
CMOS integrated circuits; hafnium compounds; silicon; tantalum compounds; CMOS; MOSFET; TaC-HfO2-Si; gate stacks; oxygen content; oxygen doping; oxygen effects; work function; Channel bank filters; Doping; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS capacitors; MOSFET circuits; Nitrogen; Scattering;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588556
