DocumentCode
2413551
Title
Fast voltage regulator for multilevel flash memories
Author
Khouri, Osama ; Micheloni, Rino ; Gregori, Stefano ; Torelli, Guido
Author_Institution
Dipt. di Elettronica, Pavia Univ., Italy
fYear
2000
fDate
2000
Firstpage
34
Lastpage
38
Abstract
This paper presents a very fast recovery voltage regulator for large capacitive loads in multilevel (ML) Flash memories. A suitable low-power structure limits positive output overshoots during transients, thereby allowing the basic regulation loop to be designed for very high recovery speed. The circuit is therefore able to quickly restore the output voltage to its regulated value when a previously discharged capacitance is connected to its output. Typical applications include read word-line and program bit-line voltage regulators for ML Flash memories, where accurate and quickly regulated voltages are vital for optimal read and program operations. Computer simulations for a 0.18 μm 2 bit/cell 64 Mb Flash memory are shown
Keywords
flash memories; voltage regulators; fast recovery; flash memories; low-power structure; positive output overshoots; regulated voltages; voltage regulator; Application software; Circuits; Computer simulation; Fabrication; Flash memory; Flash memory cells; Parasitic capacitance; Regulators; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Technology, Design and Testing, 2000. Records of the 2000 IEEE International Workshop on
Conference_Location
San Jose, CA
ISSN
1087-4852
Print_ISBN
0-7695-0689-5
Type
conf
DOI
10.1109/MTDT.2000.868613
Filename
868613
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