Title :
Low-threshold continuous-wave operation of 2.38 /spl mu/m GaInAsSb/GaSb type-II quantum-well laser diodes
Author :
Joullie, A. ; Cuminal, Y. ; Baranov, A.N. ; Bec, D. ; Nicolas, J.C. ; Grech, P. ; Rouillard, Y. ; Glastre, G. ; Blondeau, R.
Author_Institution :
Centre d´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
Strained GaInAsSb/GaSb type-II multiquantum well ridge waveguide laser diodes have operated near 2.38 /spl mu/m in the continuous regime for the first time at 23/spl deg/C, with threshold current in the range 60-150 mA and CW output power of /spl sim/1 mW/facet.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; ridge waveguides; waveguide lasers; 1 mW; 2.38 mum; 23 C; 60 to 150 mA; CW output power; GaInAsSb-GaSb; GaInAsSb/GaSb laser; continuous regime; low-threshold continuous-wave operation; multiquantum well ridge waveguide laser diodes; strained quantum well lasers; threshold current; type-II quantum-well laser diodes; Diode lasers; Gas lasers; Power generation; Quantum well devices; Quantum well lasers; Semiconductor diodes; Semiconductor waveguides; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734218
