Author :
Schram, T. ; Kubicek, S. ; Rohr, E. ; Brus, S. ; Vrancken, C. ; Chang, S.-Z. ; Chang, V.S. ; Mitsuhashi, R. ; Okuno, Y. ; Akheyar, A. ; Cho, Moon-Ju ; Hooker, J.C. ; Paraschiv, V. ; Vos, R. ; Sebai, F. ; Ercken, M. ; Kelkar, P. ; Delabie, A. ; Adelmann, C
Abstract :
We are reporting for the first time on the use of simple resist-based selective high-k dielectric capping removal processes of La2O3, Dy2O3 and Al2O3 on both HfSiO(N) and SiO2 to fabricate functional HK/MG CMOS ring oscillators with 40% fewer process steps compared to our previous report [1]. Both selective high-k removal (using wet chemistries) and resist strip processes (using NMP and APM) have been characterized physically and electrically indicating no major impact on Vt, EOT, Jg, mobility and gate dielectric integrity (PBTI, TDDB and charge pumping).
Keywords :
CMOS analogue integrated circuits; aluminium compounds; dysprosium compounds; hafnium compounds; high-k dielectric thin films; lanthanum compounds; masks; silicon compounds; Al2O3; CMOS ring oscillators; Dy2O3; HfSiON; La2O3; SiO2; dual dielectric capping layers; gate dielectric integrity; high-k dielectric capping removal; pattern selective; resist strip processes; soft mask; wet chemistries; Adhesives; Aluminum oxide; CMOS process; Chemistry; Etching; High K dielectric materials; High-K gate dielectrics; Resists; Ring oscillators; Strips;
