Single metal/single dielectric gate stack realizing triple effective workfunction for embedded memory application

Author

Manabe, Kenzo ; Masuzaki, Koji ; Ogura, Takashi ; Nakagawa, Takashi ; Saitoh, Motofumi ; Sunamura, Hiroshi ; Tatsumi, Toru ; Watanabe, Hirohito

Author_Institution

Device Platforms Res. Labs., NEC Corp., Sagamihara

fYear

2008

fDate

17-19 June 2008

Firstpage

46

Lastpage

47

Abstract

We demonstrate midgap and band-edge effective workfunctions (EWFs) control with simple metal gate process scheme (single metal gate/single gate dielectric), using impurity-segregated NiSi₂/SiON structure for embedded memory application. The application of midgap and band-edge EWF enables us to lower power consumption in SRAM and logic devices by 30% and 15% compared to poly-Si devices, respectively, due to reduced channel impurity concentration, suppressed gate depletion and high carrier mobility. These results show that NiSi₂/SiON stack is one of the most promising candidates for future system on chip (SoC) devices with embedded memory.

Keywords

SRAM chips; carrier mobility; dielectric materials; logic devices; nickel compounds; silicon compounds; system-on-chip; work function; NiSi₂-SiON; SRAM devices; carrier mobility; embedded memory; impurity-segregated structure; logic devices; lower power consumption; single dielectric gate stack; single metal gate; system on chip devices; triple effective workfunction; CMOSFET logic devices; Dielectrics; Doping; Electrodes; Energy consumption; FETs; Fluctuations; Logic devices; MOSFET circuits; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2008 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1802-2

Electronic_ISBN

978-1-4244-1803-9

Type

conf

DOI

10.1109/VLSIT.2008.4588558

Filename

4588558