• DocumentCode
    2413617
  • Title

    Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge

  • Author

    Pantisano, L. ; Trojman, L. ; Mitard, J. ; DeJaeger, B. ; Severi, S. ; Eneman, G. ; Crupi, G. ; Hoffmann, T. ; Ferain, I. ; Meuris, M. ; Heyns, M.

  • Author_Institution
    IMEC, Leuven
  • fYear
    2008
  • fDate
    17-19 June 2008
  • Firstpage
    52
  • Lastpage
    53
  • Abstract
    A novel RFCV-technique is applied to directly quantify the short channel devices at high Vds, enabling parameter extraction like velocity saturation and critical field. This technique is applied to benchmark Si (110) and Si(100) as well as Ge devices. Similarities and crucial differences between short channel parameters in Si and Ge are discussed.
  • Keywords
    MOSFET; germanium; silicon; Ge; MOSFET; RFCV technique; Si; parameter extraction; short channel devices; velocity saturation; Dielectric materials; Dielectric substrates; Doping; Electrostatics; Fabrication; Gallium arsenide; Inorganic materials; MOSFETs; Parameter extraction; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2008 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1802-2
  • Electronic_ISBN
    978-1-4244-1803-9
  • Type

    conf

  • DOI
    10.1109/VLSIT.2008.4588560
  • Filename
    4588560
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2413617