Title :
Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge
Author :
Pantisano, L. ; Trojman, L. ; Mitard, J. ; DeJaeger, B. ; Severi, S. ; Eneman, G. ; Crupi, G. ; Hoffmann, T. ; Ferain, I. ; Meuris, M. ; Heyns, M.
Author_Institution :
IMEC, Leuven
Abstract :
A novel RFCV-technique is applied to directly quantify the short channel devices at high Vds, enabling parameter extraction like velocity saturation and critical field. This technique is applied to benchmark Si (110) and Si(100) as well as Ge devices. Similarities and crucial differences between short channel parameters in Si and Ge are discussed.
Keywords :
MOSFET; germanium; silicon; Ge; MOSFET; RFCV technique; Si; parameter extraction; short channel devices; velocity saturation; Dielectric materials; Dielectric substrates; Doping; Electrostatics; Fabrication; Gallium arsenide; Inorganic materials; MOSFETs; Parameter extraction; Physics;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588560
