Title :
Improved efficiency of small area selectively oxidized VCSELs
Author :
Choquette, K.D. ; Allerman, A.A. ; Hou, H.Q. ; Hadley, G.R. ; Geib, K.M. ; Hammons, B.E.
Author_Institution :
Center for Compound Semiconductor Technol., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We demonstrate increasing slope efficiency with decreasing aperture size for 850 nm selectively oxidized VCSELs (GaAs/AlGaAs) as small as 0.5/spl times/0.5 /spl mu/m. Thin apertures are positioned at a longitudinal field null within 3/4-/spl lambda/ thick high index layers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser cavity resonators; quantum well lasers; surface emitting lasers; 850 nm; AlGaAs; GaAs-AlGaAs; VCSELs; decreasing aperture size; improved efficiency; longitudinal field null; small area selectively oxidized VCSELs; thick high index layers; thin apertures; Apertures; Laboratories; Mirrors; Optical arrays; Optical microscopy; Oxidation; Power conversion; Stimulated emission; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734222
