Title :
Ultralow loss oxide-aperture VCSELs
Author :
Bond, A.E. ; Dapkus, P.D. ; O´Brien, J.D.
Author_Institution :
Center for Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Ultralow-loss, vertical cavity lasers fabricated with thin oxide apertures at the node of the optical field exhibit reduced sensitivity of device parameters to aperture sizes <5.0 μm. Thresholds currents of 52 μA are achieved.
Keywords :
optical losses; semiconductor lasers; sensitivity; surface emitting lasers; 5 mum; 52 muA; aperture sizes; device parameters; optical field; reduced sensitivity; thin oxide apertures; thresholds currents; ultralow loss oxide-aperture VCSEL lasers; Apertures; Optical control; Optical devices; Optical diffraction; Optical losses; Optical pumping; Optical scattering; Optical sensors; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734223
