Impact of the different nature of interface defect states on the NBTI and 1/f noise of high-k / metal gate pMOSFETs between (100) and (110) crystal orientations

Author

Sato, Motoyuki ; Sugita, Yoshihiro ; Aoyama, Takayuki ; Nara, Yasuo ; Yuzuru Ohji

Author_Institution

Semicond. Leading Edge Technol., Inc. (Selete), Tsukuba

fYear

2008

fDate

17-19 June 2008

Firstpage

64

Lastpage

65

Abstract

We have clarified the difference in NBTI and 1/f noise of high-k/metal gate pMOSFETs between (110) and (100) oriented surfaces. Although the initial interface state density on (110) is higher than that on (100), the NBTI is better on the (110) surface. That is due to the different interface defect nature of interface defect states on (110) surface compared to (100). This difference has a strong impact on 1/f noise.

Keywords

1/f noise; MOSFET; high-k dielectric thin films; interface states; stability; 1/f noise; NBTI; crystal orientations; high-k dielectric; interface defect states; interface state density; metal gate pMOSFET; negative bias temperature instability; Charge pumps; Degradation; High K dielectric materials; High-K gate dielectrics; Interface states; MOSFETs; Niobium compounds; Semiconductor device noise; Temperature; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2008 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1802-2

Electronic_ISBN

978-1-4244-1803-9

Type

conf

DOI

10.1109/VLSIT.2008.4588565

Filename

4588565